An Company
12214 Plum Orchard Drive, Silver Spring, MD 20904, USA FAX: +1 (301) 572-6435 Phone +1 (301) 572-7834				Research Program: Gallium Nitride Bulk Crystals Large area GaN epi InGaN Epitaxial Materials
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	Recent news and hot topics
	Technologies and Devices International Inc. (TDI) joins Oxford Instruments plc. TDI announces production of 20-130 microns thick 3-inch GaN epi products TDI, Inc. announces Dr.V.Dmitriev’s passing TDI Celebrates its 10^th anniversary 4-Inch AlN on SiC Semi-Insulating Substrates are now available! Semi-Insulating Substrate for High Power Applications TDI Demonstrates Novel InGaN Epitaxial Materials at the International Workshop on Nitride Semiconductors (IWNS) 2006 TDI Demonstrates first HVPE grown GaN AlGaN MQWs
	Semi-Insulating Substrates for AlGaN/GaN HEMTS: 10-20 microns AlN layer on electrically conducting SiC Extra Quality GaN materials up to 45 microns thick GaN on Sapphire: Novel substrate for blue LED production
	Compound Semiconductor (IoP), September 2006, pp. 29-30 : “TDI cracks AlN template trouble”

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Technologies and Devices International, Inc. (TDI) develops, manufactures and markets electronic components using  III-V nitride semiconductor materials. TDI produces variety of GaN, AlN and AlGaN epitaxial materials on sapphire and SiC substrates. TDI supplies these products to more than 100 customers world wide.

TDI is developing bulk crystals, epitaxial structures and devices over a range of materials with applications in short wavelength optoelectronics and high power semiconductor electronics. 

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