TDI, Inc. announces a product sale to mark the Company’s 10th anniversary! We are happy to provide 10% discount for any order of TDI current products received by TDI from August 10 to September 10, 2007. Please contact us for details!

TDI, Inc. supplies a variety of semiconductor engineering substrates (templates) for GaN and AlGaN epitaxial growth by MBE & MOCVD

• GaN-on-sapphire
• AlN-on-sapphire
• AlGaN-on-sapphire
• GaN-on-SiC
• AlN-on-SiC
• InN on GaN/Sapphire

These templates are excellent materials for production, product development and fundamental research enabling new applications including Ultra High Power HEMTs, High Brightness LEDs using Laser Lift Off, 250 – 400 nm UV emitters and detectors.

For more details on specifications and parameters visit www.tdii.com

All these materials are grown by Hydride Vapor Phase Epitaxy (HVPE) at TDI, Inc. TDI will report recent progress and future horizons of industrial HVPE technology and equipment and novel nitride semiconductor materials at the 4^th China International Forum & Exhibition on Solid State Lighting 2007, August 22-24, Shanghai and the 7^th International Conference Nitride Semiconductors, Las Vegas, September 16-21, 2007.

Customers satisfaction in semiconductor materials is our primary concern. TDI sales

Parameter	Type of template
	GaN-on-sapphire	AlN-on-sapphire	AlGaN-on-sapphire	AlN-on-SiC
Layer	GaN	AlN	AlGaN 5 – 85 % AlN	AlN
Layer thickness, microns	1 - 45	0.2 - 7	0.2 – 0.8	10 - 20
Substrate	2-, 3-, and 4-inch sapphire	2-inch sapphire	2-inch sapphire	2- 3- and 4-inch 6H- or 4H-SiC; conducting
Layer doping	Undoped, Si, Mg, Zn	-	Undoped, Si	-
Concentration |Nd-Na|, cm^-3	10^15 – 10^18	-	Depends on AlN %	-
Electrical conductivity	n-type, p-type, high resistivity	Insulating	n-type or insulating	Insulating
Layer surface	As grown	As grown	As grown	As grown rough Polished As grown smooth
UV transparency	Transparent for > 365 nm	Transparent for > 200 nm	Depends on AlN %	Transparent for > 200 nm

InN on GaN/Sapphire

(pilot production of research samples)

Parameter	Value/Description
Typical thickness of InN, microns	0.1 – 0.5
Initial substrate	C-plane sapphire, 2-inch
Electrical conductivity of InN	n-type
GaN layer thickness, microns	3-20

For all inquiries, please contact welcome@tdii.com

Technologies and Devices International, Inc.

12214 Plum Orchard Dr., Silver Spring, MD 20904 USA

TEL: +1 301 572 7834; FAX: +1 301 572 6435;   www.tdii.com

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