semi insulating wafers to substrate production line
New substrate consists of 10 - 20 microns
of single crystal AlN film deposited on an electrically conductive 100 mm
(4-inch) silicon carbide (SiC) substrate.
AlN-on-SiC substrates have very good lattice and thermal match to GaN-based
devices. They also combine
the unique thermal conductivity of SiC and the exceptionally high intrinsic
electrical resistivity of AlN. The thickness of the AlN film is sufficient to
provide excellent electrical insulation and low current leakage for high
frequency devices.
“Test samples of 100 mm AlN-on-SiC wafers
have been shipped to TDI customers and results have been positive and very
encouraging,” said Vladimir Dmitriev, President and CEO of TDI. He added,
“Large area AlN-based substrates offer important technical and economical
benefits. This can lead to dramatic cost
reductions for GaN high electron mobility transistors (HEMT) and power
amplifiers particularly for base station applications. New product breakthrough
will allow our customers to use existing 4-inch manufacturing lines, reduce
production cost, and speed up commercialization of GaN devices.”
About TDI
The company is a privately owned developer
and manufacturer of novel compound semiconductors including GaN, AlN, and
For more information, contact:
Phone:
FAX:
Email: welcome@tdii.com
www.tdii.com
Photo of 2-, 3-, and 4-inch AlN-on-SiC wafers produced by TDI, Inc. Thick AlN layers are deposited on electrically conducting SiC substrates by proprietary hydride vapor phase epitaxy (HVPE).