InxGa1-xN Template Substrates

 


Schematic cross-sectional view

 

 

 

 

 


Photo of 2-inch InGaN template substrate

 

.

 

Typical parameters of InxGa1-xN layers

 

InN content
(x)

FWHM of -scan X-ray (00.2) rocking curve,
 arc sec

Thickness, microns

0.05-0.2

<900

0.02-0.5

 

For GaN on sapphire template parameters see our standard specification

 

Fabrication method: hydride vapor phase epitaxy (HVPE)

 

X-ray diffraction spectrum (a) and -scan rocking curve (b)

measured for InGaN layer grown on GaN/Sapphire

 

 

(a)

(b)

 

 

 

 

For more information contact info@tdii.com