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Large
Area GaN epitaxial structures |
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TDI has developed proprietary HVPE
process and equipment to grow GaN epitaxial layers on 6-inch substrates. |
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Photo of 6-inch GaN-on-sapphire grown by HVPE
at TDI, Inc.. |
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Photoluminescence map for 6-inch GaN-on-sapphire epitaxial wafer. Courtesy
of Accent Optical Technologies. |
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For more
information please contact welcome@tdii.com
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Copyright (c)
1997-2006 by TDI, Inc. |