Bulk GaN - Advanced substrate material for device fabrication

First True Bulk GaN

TDI, Inc.  proudly announces fabrication of the First True Bulk GaN crystals

This is a breakthrough achievement in TDI’s program to develop GaN substrate fabrication technology.

Fabrication process consists of the following steps:

 

Step 1:
Bulk GaN boule growth 
on GaN seed

Step 2 :
Slicing of the grown boule into wafers
(35 mm diameter GaN boule sliced by a diamond wire saw is shown)

Step 3 :
Polishing of GaN wafers

LED fabricated on TDI’s bulk GaN substrate. One of the electrodes is placed on top of the LED structure and  the other one is connected to conducting GaN substrate.

 


Bulk GaN substrates are not available yet commercially
Please, contact TDI for further information

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