TDI announces production of 20-130 microns thick 3-inch GaN epi products

April 3, 2008. Silver Spring, Maryland, USA.

Technologies and Devices International Inc. (TDI), a leading developer and supplier of compound nitride semiconductor materials, announced today that its 3-inch thick GaN wafers are now in production. These wafers are manufactured by TDI’s proprietary patented hydride vapor phase epitaxial (HVPE) process and multi-wafer equipment at the company’s facility in Silver Spring, MD

TDI’s GaN wafers consist of a 20-130 microns thick GaN layer deposited on (0001) c-plane 3-inch sapphire substrates. This new product broadens TDI’s family of GaN, AlN, AlGaN, InN, and InGaN templates manufactured on 2-inch Sapphire and AlN templates on 2-, 3-,4-inch SiC. These thick GaN templates are targeted for applications such as quasi-bulk low-defect GaN substrates for MOCVD, MBE homoepitaxial growth of advanced blue, green and white GaN-based light emitting diodes (LEDs) as well as laser diodes. Use of the wafer lowers the cost of epitaxy, substantially simplifies the growth process, and improves final device performance.

“There is a clear trend in the industry to develop and commercialize GaN-based devices on larger substrates. TDI ‘s customers are rapidly moving from the industry standard 2-inch epitaxial wafer used for fabrication of light emitters, to 3-inch wafers,” says Alexander Usikov, TDI’s Technical Director. “Increasing the quasi-bulk GaN wafer size to 3 inches is a substantial step toward dramatically reducing nitride epi wafer pricing for blue-green-white LEDs. TDI’s core competence is based on a cost-effective proprietary HVPE process enabling extremely competitive pricing. TDI has been perfecting the development of our advanced HVPE process for several years and we are now able to fabricate 3-inch thick GaN wafers in commercial quantities. This production breakthrough of large area low-cost GaN wafers will benefit our customers in terms of higher device throughput, improved material yields and reduced production costs.”

About TDI

TDI Inc. is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, AlGaN, InN, and InGaN. TDI has developed and commercialized a variety of compound semiconductor materials and devices primarily for applications in solid-state lighting, short wavelength optoelectronics, and RF power electronics. For recent development results and TDI’s product list, please visit www.tdii.com.

For more information, please contact

TDI, Inc.

12214 Plum Orchard Drive

Silver Spring, MD 20904, USA

FAX: 1 301 572 7834

E-mail: welcome@tdii.com

www.tdii.com