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TDI
Fabricates the First 4-inch AlN-on-SiC Semi-Insulating Substrate for High
Power Applications
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To read
in Japanese, click here |
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The new
product targets substrate applications for ultra high power AlGaN/GaN devices
including high electron mobility transistors (HEMTs) and high frequency power
amplifiers for next generation of wireless communications. Other target
applications include high power blue and ultra violet (UV) light emitters,
light emitting diodes (LEDs) and laser diodes (LDs). The
product prototype consists of approximately
10 microns of thick single crystal AlN film deposited on a conductive
4-inch silicon carbide (SiC) substrate.
Novel AlN-on-SiC substrates have very good lattice and thermal match
to GaN-based devices and combine the unique thermal conductivity of SiC and
exceptionally high intrinsic electrical resistivity of AlN. Thickness of AlN
film is sufficient to provide reliable insulation and low current leakage for
high frequency devices. Fundamental material parameters of GaN-based
semiconductors result in superior power and frequency performance of
resulting devices. However, lack of
suitable substrates limits development and commercialization of GaN-devices. To date,
only 3-inch semi insulating substrates with high thermal conductivity have
been commercially available for fabrication of power GaN-based RF devices.
Introduction of 4-inch wafers will dramatically reduce device production cost
by utilizing larger substrate area and
taking full advantage of 4-inch device processing lines standard for
GaAs and other RF semiconductors. “Development of 4-inch semi insulating substrates for high power
GaN-based HEMTs has a long history and we are pleased to inform nitride
community and especially our customers that the first prototype of AlN-based
4-inch substrate has been fabricated. The prototype was fabricated using
proprietary stress control technology and crystal growth equipment developed
by TDI for deposition of thick crack free AlN films”, stated Vladimir
Dmitriev, President and CEO of TDI. He
added: “Our customers have been asking about 4-inch substrates from the
very introduction of the first 2-inch AlN-on-SiC wafers three years ago
followed by 3-inch product introduction a year ago. This new product will allow our customers
to use existing 4-inch device manufacturing lines, reduce production cost and
speed up commercialization of GaN devices.
We plan to start pilot production of 4-inch AlN-based substrates in a
few months and make the first product shipments in the last quarter of
2006”. About group III nitride compound
semiconductor materials Nitride
semiconductors are used for fabrication of a new generation of electronic
devices such as HEMTs for advanced wireless communications, and novel
optoelectronic devices such as blue and UV LEDs and LDs, and UV
photodetectors for applications in cellular phones, giant displays, solid
state lighting and ultra large capacity optical storage systems, and variety
of military applications. About
TDI The
company is a privately owned developer and manufacturer of novel compound
semiconductors including GaN, AlN, and For more information visit: http://www.compoundsemiconductor.net/articles/magazine/11/12/3/1
Contact for more information: |
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Copyright © 2006 TDI, Inc. |