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TDI Introduces Novel AlGaN Substrates for UV Semiconductor Emitters |
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November 29, 2004…
GaN-based light emitting devices operating in the UV and deep UV spectral regions are the subject of intense development for environmental, medical, bio technical, and military applications. Tremendous potential for GaN-based LEDs also exists in solid-state lighting applications. The GaN LED market is one of the fastest growing technical markets worldwide projected by Strategies Unlimited to exceed $4B in 2007. One of the major technical stoppers for UV LEDs development and commercialization is the absence of low-defect UV transparent substrate materials having close crystal parameters to AlGaN light emitting devices. Novel UV transparent AlGaN-on-sapphire materials fabricated by TDI's patented hydride vapor phase epitaxial (HVPE) process provide a potential solution for the problem. "Deposition of high-quality UV transparent AlGaN films is very challenging and we are pleased with recent results on the HVPE growth of AlGaN materials, the process which has no analogues," says Vladimir Dmitriev, CEO and President of TDI. "Now we can produce AlGaN films with AlN composition from 5% to 75% covering substrate needs for UV optoelectronic devices operating from 250 to 350 nm. We thank the Defense Advanced Research Project Agency (DARPA), Microsystems Technology Office and the U.S. Department of Defense for providing support for this project. Initial test of novel AlGaN templates by TDI customers gave very promising results and the Company has received trial orders for these materials. We plan to continue material development and start pilot production of 2-inch UV transparent low-defect AlGaN templates in 2005; it will be an important addition to our GaN template product portfolio." At the MRS exhibits (http://www.mrs.org/), the latest AlGaN-on-sapphire products will be displayed and several TDI representatives will be available to discuss possible development and sales arrangements for AlGaN substrates for UV and blue light emitters. About TDI Founded in 1997, TDI Inc. is a leading developer and manufacturer of nitride compound semiconductors, GaN, AlN, and AlGaN. The Company's operations are located in Silver Spring, Maryland, a suburb of Washington, D.C. The company produces and sells a broad range of customized epitaxial products including low-defect GaN-on-sapphire templates for blue LEDs and AlN-on-SiC semi-insulating substrates for high-power GaN-based transistors. Further information is available at http://www.tdii.com/. Contact: TDI, Inc.
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Copyright © 2004 TDI, Inc. |