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TDI demonstrates 6-inch GaN epitaxy |
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October 26, 2004…
GaN is a high performance compound semiconductor material used for the fabrication of blue spectrum (blue, green, ultra violet and white) light emitting diodes (LEDs) and laser diodes (LDs), and high power/high frequency transistors for radar, wireless communication, and space electronics. White LEDs, in particular, are the focus of intense development by major optoelectronic manufacturers to replace traditional forms of illumination, including the common incandescent light bulb. Blue LDs are key elements for the upcoming generation of giant capacity DVD/CD and optical drives. The GaN device market is one of the fastest growing technical markets worldwide. According to Strategies Unlimited, the market it is projected to exceed $4B in 2007. |
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Although there is a strong development and commercialization effort for GaN devices around the world, current industry standard is 2-inch diameter epitaxial wafers with R&D effort in 3- and 4-inch sizes. Transitioning to larger substrates will tremendously benefit GaN device performance and economics. The most common substrate material for GaN epitaxy is sapphire. |
Room temperature PL spectrum of undoped GaN layer. Pictures are courtesy of Accent Optical Technologies |
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“It is general semiconductor industry mainstream to reduce production cost and improve device performance and yield by increasing wafers size. We are proud to lead nitride technology to more competitive and economical solutions,” said Vladimir Dmitriev, president and CEO of TDI. “This result became possible due to our collaboration with Rubicon Technology, Inc., a U.S. based company, which supplied the 6-inch polished sapphire substrates, and with U.S. Departments of Commerce, Energy, and Defense, who provided the financial support through several R&D programs directed to developing a new generation of GaN epitaxial technology. This demonstration of 6-inch GaN epitaxy is a specific result of the Phase I SBIR program recently awarded to TDI by the Missile Defense Agency”. |
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PL peak FWHM map |
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TDI will present more information on large area multi wafer advance HVPE manufacturing processes and equipment for GaN, AlN, and AlGaN materials at the Compound Semiconductor MAX 2004 Conference and Exhibition, Monterey, CA, October 26-28, 2004 (http://compoundsemiconductor.net/CSWEEK-2004). About TDI Contact: TDI, Inc.
About Rubicon
Technology, Inc. For more information please visit Rubicon’s website at www.rubicon-es2.com or contact our sales department at 847 295-7000, or via e-mail at sales@rubicon-es2.com. |
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Copyright © 2004 TDI, Inc. |