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TDI Demonstrates Indium Nitride Epitaxial Materialsand
Nano-Structures
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SILVER SPRING, MD -- 08/22/2005 -- Technologies and Devices International, Inc., a privately held Maryland corporation (TDI), today announced a significant step in the development of advanced hydride vapor phase epitaxial (HVPE) technology for group III nitride products by demonstrating indium nitride (InN) epitaxial layers and structures. Novel 2-inch diameter InN-on-sapphire templates and InN/GaN heterostructures will be featured at the 6th International Conference on Nitride Semiconductors in Bremen, Germany, from August 27 through September 3 this year. |
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Optoelectronic and
electronic devices based on Group III Nitride materials (GaN, AlN, InN) are the
subject of intense development for various applications including solid state
lighting, bio and chemical detection systems, environmental, communication
and military equipment. The GaN-based market is
projected to reach $5B in 2007 and exceed $7B in 2009. |
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Dr.
Alexander Syrkin, crystal growth key specialist at TDI, commented, "This
result is an important step towards HVPE technology for InN-containing
materials and devices including high brightness blue, ultra violet, and white
light emitting diodes (LEDs). TDI has already demonstrated GaN-based devices
by proprietary patented HVPE technology. New process allows us to deposit InN
epitaxial layers or 3-dimentional nano-size structures in a controllable
manner. Development of InN and InGaN materials and structures is progressing
rapidly thanks to intense collaboration with the Army Research Laboratory and
Texas Technical University." Dr. Vladimir Dmitriev, President and CEO of
TDI, added, "TDI is manufacturing and supplying a variety of nitride
epitaxial products including GaN, AlGaN, and AlN template substrates for blue
and UV LEDs, and high power transistor applications. Latest achievements in
InN technology will help us to develop future products and provide nitride
community with advanced materials and device structures. We are very grateful
to the Department of Energy supporting this project in a frame of Solid-State
Lighting Program." About TDI TDI was founded in Gaithersburg, MD, in 1997 as a new independent business. The Company is developing and manufacturing novel compound semiconductors including GaN, AlN, and SiC for applications in short wavelength optoelectronics and high power/frequency electronics. Contact for more information:
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Copyright © 2005 TDI, Inc. |