TDI Celebrates 10 Year Anniversary

SILVER SPRING, MD (Marketwire - August 02, 2007) - Technologies and Devices International, Inc. (TDI), the leading developer and supplier of compound nitride semiconductor materials, marks its 10th anniversary in business on August 28, 2007. During that time frame, TDI has been proud to contribute its expertise in substrate and epitaxial products to the rapidly expanding markets of solid state lighting, ultra violet (UV), blue and green light emitting devices, and high-power/high-frequency communication devices.

TDI was founded in Gaithersburg, Maryland as a new independent business in August 1997. Its charter was to focus on the development of novel manufacturing technology for wide band gap semiconductor materials, gallium nitride (GaN), aluminum nitride (AlN), and silicon carbide (SiC). In 2002, TDI outgrew its Gaithersburg facility and moved to Silver Spring, MD. Currently, the Company is manufacturing and selling a variety of compound semiconductor products including 2-inch, 3-inch, and 4-inch (100 mm) GaN-on-sapphire, AlN-on-sapphire, AlGaN-on-sapphire, InN/GaN-on-sapphire, and AlN-on-SiC epitaxial wafers. Each of these products is fabricated at TDI using its patented proprietary hydride vapor phase epitaxial (HVPE) technology and equipment.

"Over the past ten years, TDI has developed a significant range of products to address the nitride semiconductor needs for optoelectronic and electronic industries. During our fiscal year ended on June 30, 2007, the Company shipped its products to nearly 100 different commercial and academic customers all over the world. One of the keys to TDI's success has been the development of high-throughput multi-wafer HVPE equipment. This equipment and related processing expertise has allowed TDI to provide our customers with cost-effective high-quality products," stated Vladimir Dmitriev, President and CEO of TDI. "Our success would not have been possible without the continuous support and feedback from our customers, our colleagues and friends from many industrial firms, universities, and government agencies. In our ten years in business, TDI has been awarded more than 30 R&D contracts and grants financed by the U.S. Departments of Defense, Energy, and Commerce and this support is very important for our business achievements. We thank them all!"

Dr. Alexander Usikov, R&D Director at TDI, added: "Over these 10 years, the Company pioneered many innovations in nitride semiconductor technology including demonstrations of:

· HVPE-first GaN p-type materials and pn diodes in 1998,

· the first large area (30x30 mm) AlN freestanding wafers in 2000,

· the stimulated emission from HVPE grown AlGaN/GaN double heterostructures in 2000,

· the first true bulk GaN crystals in 2001, the first AlGaN free standing wafers in 2003,

· novel stress-control HVPE process to produce crack-free thick AlN materials in 2003,

· HVPE-first AlGaN/GaN high electron mobility transistors (HEMTs) and AlGaN/AlGaN

· UV light emitting diodes in 2003 and 2004, respectively,

· the first 6-inch GaN epitaxial wafers in 2004, the first 4-inch AlN/SiC semi-insulating substrates for high-power HEMTs in 2006,

· the first GaN quantum well structures by novel low deposition rate HVPE in 2006,

· and the first high-quality InN and InGaN materials by HVPE in 2006.

These results have been achieved with the great help of all our co-workers from academia, government, and industry and we proudly acknowledge their contributions. Our next targets for internal development and commercialization programs are low defect substrate materials for solid state lighting applications and InGaN-based lasers, advanced cost-effective device structures grown by HVPE, and a commercial version of our proprietary HVPE equipment for both bulk materials and device structures."

TDI will report recent progress and future horizons of industrial HVPE technology and equipment and novel nitride semiconductor materials at the 4th China International Forum & Exhibition on Solid State Lighting 2007, August 22-24, Shanghai and the 7th International Conference Nitride Semiconductors, Las Vegas, September 16-21, 2007.

About TDI

The company is a privately owned developer and manufacturer of novel compound semiconductors including GaN, AlN, AlGaN, and InN. GaN is the compound semiconductor material used for the fabrication of blue spectrum (blue, green, ultra violet (UV) and white) light emitting diodes (LEDs), laser diodes (LDs) and high-frequency/high-power transistors. The GaN-based market is projected to reach $5B in 2007 and exceed $7B in 2009. TDI has developed a variety of compound semiconductor materials and devices, primarily for applications in solid state lighting, short wavelength optoelectronics and RF power electronics. For novel development results and TDI's product list please visit www.tdii.com.

For more information, contact: 

TDI, Inc. 
12214 Plum Orchard Drive 
Silver Spring, MD 20904, USA
Phone: 1 301 572 7834

FAX: 1 301 572 6435

Email: welcome@tdii.com 

www.tdii.com