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April
10, 2008
Technologies and
Devices International Inc. (TDI) joins Oxford Instruments plc
April
3, 2008
TDI
announces production of 20-130 microns
thick 3-inch GaN epi products
January
10, 2008
TDI, Inc. announces Dr.V.Dmitriev’s
passing
August
7, 2007
TDI, Inc.
announces a product sale to mark the Company’s 10th anniversary!
August
2, 2007
TDI
Celebrates 10 Year Anniversary
November
8, 2006
TDI
adds 100 mm (4-inch) AlN-based semi insulating
wafers to substrate production line
October
23, 2006
TDI Demonstrates
Novel InGaN Epitaxial Materials at the
International Workshop on Nitride Semiconductors (IWNS) 2006
October
17, 2006
TDI announces
availability of Indium Nitride (InN) on sapphire
samples
October 12, 2006
TDI demonstrates novel technology for
GaN and AlGaN quantum wells and superlattices
June 2, 2006
August 22, 2005
August 15, 2005
TDI Releases Semi-Insulating Substrates for AlGaN/GaN HEMTs
November 29, 2004
TDI Introduces Novel AlGaN Substrates for UV Semiconductor Emitters
October 26, 2004
TDI demonstrates 6-inch GaN epitaxy
September 12, 2003
TDI Demonstrates One Square Centimeter SiC Diode Chip
February 25, 2003
TDI Releases New Semi-Insulating Substrates
for GaN Devices
October 21, 2002
TDI Achieves Next Step in Gallium Nitride Substrate
Materials with Sampling of Thick P-type GaN Substrates
July 19, 2002
TDI Expands GaN Manufacturing to New 32,000
Sq. Ft. Facility in Silver Spring, Maryland
October 16, 2001
TDI Achieves Compound Semiconductor
Breakthrough with 35mm True Bulk Gallium Nitride Substrate
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