Aluminum Gallium Nitride on Sapphire template

Excellent substrate for UV optoelectronics devices

Schematic cross section of AlGaN/Sapphire template

AlGaN Material parameters

*Template type*	30	70
AlGaN composition, mol.%	5% - 60%	60% - 85%
Thickness of AlGaN layer, microns	0.2-0.8
Electrical conductivity	n-type for <35 mol.%
Initial substrate	c-plane sapphire
Diameter, inch	2 and 3
Surface of AlGaN	As grown
Optical transparency	UV transparncy depends on alloy composition
Exclusion area	2 mm periphery region

Two types of templates are available:

1. Standard grade, usable area >90%

2. Research grade, usable area >80%

Research grade templates are supplied at reduced price subject of availability.

Contact TDI for additional information, prices and availability of templates

User benefits to use AlGaN templates

· Start growth on native AlGaN surface

· Simplify nucleation process (no buffer layer is needed)

· Reduce defect density in device structure

· Improve device parameters

· Increase epi productivity on existing growth equipment

· Reduce epi cost via throughput and yield increase

· Reduce maintenance cost

· Avoid possible patent contest issues related to buffer layer

Optical transmission spectra measured for AlGaN, GaN and AlN

templates grown by HVPE at TDI

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