Aluminum Nitride on Sapphire templates

Aluminum Nitride Layers for III-V Nitride Epitaxy and
High Frequency Applications

Schematic cross section of AlN/Sapphire template

Material parameters

*Template type*	*0.5*	2*	5*
Typical thickness of AlN, microns	0.2 - 1.0	1 - 3	3 - 7
Initial substrate	c-plane sapphire
Diameter, inch	2 and 3
Surface of AlN	As grown
Electrical conductivity	Insulating
Optical transparency	UV transparent
Exclusion area	2 mm periphery region

* Pilot production

Two types of templates are available:

1. Standard grade, usable area >90%

2. Research grade, usable area >80%

Research grade templates are supplied at reduced price subject of availability.

Contact TDI for additional information, prices and availability of templates

User benefits to use AlN templates

· Start growth on native AlN surface

· Simplify nucleation process (no buffer layer is needed)

· Reduce defect density in device structure

· Improve device parameters

· Increase epi productivity on existing growth equipment

· Reduce epi cost via throughput and yield increase

· Reduce maintenance cost

· Avoid possible patent contest issues related to buffer layer

Optical transmission spectra measured for AlN/Sapphire template grown by HVPE at TDI