Indium Nitride Epitaxial Materials

	Indium Nitride Layers for Sensors and  High Frequency Applications
Schematic cross section of InN/GaN/Sapphire sample

TDI announces availability of pilot samples of InN epitaxy. InN materials consist of InN epitaxial layer deposited on GaN/sapphire template.

We would be happy to satisfy your needs in InN and appreciate your feedback on desirable material parameters. Please contact TDI with your suggestions.

Material parameters

Parameter	Value
Typical thickness of InN, microns	0.1 – 0.5
Initial substrate	C-plane sapphire
Diameter, inch	2
Surface of InN	As grown
Electrical conductivity of InN	n-type
Concentration Nd-Na, cm^-^3	>5E18
Typical electron mobility, cm^2/V sec	10-120
FWHM of x-ray RC omega-scan (00.2), arcsec	< 900
Optical band gap*, eV	~1.8
n-GaN layer thickness, microns	>3

* Estimated based on CL and transmission-reflection measurements

2-inch InN-epi X-ray diffraction map (FWHM of omega-scan (00.2) rocking curve)
(a)		(b)
XRD omega-scan rocking curves for InN (00.2) and (10.2) reflections (a) and (b), respectively.
XRD spectrum of InN/GaN on sapphire wafer, scan
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