Nonpolar GaN template substrates

 

a-plane GaN layers are grown on r-plane sapphire

by hydride vapor phase epitaxy (HVPE)

 

 

 

 

 

 

 

Undoped a-GaN template. Typical Properties.

 

Template type

5a

Average thickness of GaN, microns

2 - 5

FWHM of x-ray RC omega-scan (00.2), arc sec

<1000

Doping

undoped

GaN Conductivity

n-type

Thickness standard deviation

<10%

Sapphire substrate

r-plane,  single side polished

Diameter, inch

2

Surface of GaN

As grown or polished

GaN orientation

a-plane

 

 

 

 

 

 

Figure 1.  Cross-sectional SEM image (top) and optical photograph of as-grown surface
 (bottom) of a-plane GaN layer grown by HVPE on r-plane sapphire.

 

 

 

Figure 2.  X-ray 2q/w scan (top) and w scan x-ray diffraction (11-20)
rocking curve (bottom) for a-plane GaN layer grown on r-plane sapphire.